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MTE2D0N04E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.0 mΩ(typ) Symbol MTE2D0N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE2D0N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoH.

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Datasheet Details

Part number MTE2D0N04E3
Manufacturer Cystech Electonics
File Size 415.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE2D0N04E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE2D0N04E3 Spec. No. : C072E3 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.