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MTE2D0N04E3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

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MTE2D0N04E3 N-Channel Enhancement Mode Power MOSFET by Cystech Electonics - Datasheet Preview — Datasheet preview – MTE2D0N04E3

Datasheet Details

Part number	MTE2D0N04E3
Manufacturer	Cystech Electonics
File Size	415.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE2D0N04E3 Datasheet
Additional preview pages of the MTE2D0N04E3 datasheet.

Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.0 mΩ(typ) Symbol MTE2D0N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE2D0N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoH.

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Published: Feb 28, 2017 |