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MTEA5N10J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package Equivalent Circuit MTEA5N10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTEA5N10J3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13”.

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Datasheet Details

Part number MTEA5N10J3
Manufacturer Cystech Electonics
File Size 346.43 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA5N10J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C869J3 Issued Date : 2016.07.29 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTEA5N10J3 BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=10A 100V 9.
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