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MTEA6C15Q8 - N & P-Channel Enhancement Mode Power MOSFET

Description

design, low on-resistance and cost-effectiveness.

Features

  • Simple drive requirement.
  • Fast switching speed.
  • ESD protected.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTEA6C15Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTEA6C15Q8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs /.

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Datasheet Details

Part number MTEA6C15Q8
Manufacturer Cystech Electonics
File Size 298.94 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA6C15Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C938Q8 Issued Date : 2013.09.23 Revised Date : Page No. : 1/12 N- AND P-Channel Enhancement Mode MOSFET MTEA6C15Q8 BVDSS N-CH P-CH 150V -150V ID 2.5A -2A RDSON(MAX.) 230mΩ 365mΩ Description The MTEA6C15Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
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