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MTN4N65CI3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=10V, ID=2A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.8Ω(typ).

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Datasheet Details

Part number MTN4N65CI3
Manufacturer Cystech Electonics
File Size 382.22 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65CI3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C080I3 Issued Date : 2016.07.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N65CI3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.