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MTNK6N3 - N-Channel Enhancement Mode Power MOSFET

Features

  • ESD protected gate , ≥2kV (HBM).
  • High speed switching.
  • Pb-free lead plating and halogen-free package.
  • Easily designed drive circuits.
  • Low-voltage drive.
  • Easy to use in parallel Symbol MTNK6N3 D Outline SOT-23 D G G：Gate S S：Source D：Drain S G Ordering Information Device MTNK6N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant pro.

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Datasheet Details

Part number MTNK6N3
Manufacturer Cystech Electonics
File Size 435.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTNK6N3 Datasheet
Additional preview pages of the MTNK6N3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C057N3 Issued Date : 2017.01.09 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTNK6N3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=500mA RDS(ON)@VGS=4.5V, ID=200mA 60V 0.35A 0.9Ω(typ) 1.
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