Cystech BTD5765B3
NPN Planar Transistor
FEATURES
● High current capability● Low collector-to-emitter saturation voltage
● High allowable power dissipation
APPLICATIONS
● Relay drivers, lamp drivers, motor drivers, strobes Symbol BTD5765B3 B : Base C : Collector E : EmitterABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation (Note) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 15 10 7 5 9 550 150 -55~+150 Unit V V V A A mW °C °C Note : when a device is mounted on a glass epoxy board, measuring 35mm×30mm×1mm. BTD5765B3 CYStek Product Specification Free Datasheet CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 15 10 7 450 400 200 Typ. 230 170 25 Max. 100 100 180 350 0.95 800 Unit V V V nA nA mV mV 1.2V MHz pF Spec. No. : C852B3 Issued Date : 2004.05...