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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA733
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier applicatioms.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -100
Base Current
IB -20
Total Power Dissipation
PD 250
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit V V V mA mA
mW oC oC
TO-92
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70) Min
2o Typ 2o Typ
(1.0.2570)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 5oTyp. 5oTyp.