Datasheet Details
| Part number | BC818 |
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| Manufacturer | DC COMPONENTS |
| File Size | 225.82 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | BC818-DCCOMPONENTS.pdf |
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Overview: DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS BC818 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
| Part number | BC818 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 225.82 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | BC818-DCCOMPONENTS.pdf |
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Designed for use in drive and output stages of audio amplifiers.
SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating Unit 30 V 25 V 5 V 500 mA 225 mW +150 oC -55 to +150 oC .020(0.50) .012(0.30) 3 .063(1.60) .108(0.65) .055(1.40) .089(0.25) 1 2 .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) .026(0.65) .010(0.25) .004 (0.10) Max .027(0.67) .013(0.32) Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max BVCES 30 - - Collector-Emitter Breakdown Voltage BVCEO 25 - - Emitter-Base Breakdown Volatge BVEBO 5 - - Collector Cutoff Current ICBO - - 0.1 Emitter Cutoff Current IEBO - Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.1 - 0.7 Base-Emitter On Voltage DC Current Gain(1) VBE(on) - - 1.2 hFE 100 - 600 Transition Frequency fT - 100 - Output Capacitance Cob - - 12 (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Unit V V V µA µA V V - MHz pF Test Conditions IC=10µA IC=10mA IE=1µA VCB=20V VEB=4V IC=500mA, IB=50mA IC=300mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0 Classification of hFE Rank 16 Range 100~250 25 160~400 40 250~600
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