XL1225
Description
These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They are intended for low cost, high volume applications.
Pinning
1 = Cathode 2 = Gate 3 = Anode
Absolute Maximum Ratings(TA=25o C)
Characteristic
Symbol Rating
Peak Repetitive Off-State Voltage(RGK=1KΩ)
ML1225 XL1225
On-State RMS Current(TC=40o C)
Peak Gate Current(10µs Max)
Gate Power Dissipation(20ms Max)
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
VDRM
IT(RMS) IGM
PG(AV) VGRM
TJ TSTG
300 380 0.8
1 0.1 8 -40 to +125 -40 to +125
Unit
A A W V o C o C
TO-92
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 Min (12.70)
2o Typ 2o Typ
.050 Typ (1.27)
.022(0.56) .014(0.36)
(2.1.5040)Typ
.022(0.56) .014(0.36)
.148(3.76) .132(3.36)
5o Typ 5o...
