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LB123T Datasheet PDF

Dc Components LB123T

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Part No. LB123T
Datasheet LB123T Download
Manufacturer
Dc Components
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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LB123T datasheet page 1 preview

DESCRIPTION

Designed for high voltage, high speed switching circuits, and amplifier applications . Pinning 1 = Emitter 2 = Collector 3 = Base .041(1.05) .037(0.95) .154(3.91) .150(3.81) TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50)

ABSOLUTE MAXIMUM RATINGS

(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Rating 600 400 8 1 2 3.5 30 +150 -55 to +150 Unit V V V A A W W o o Symbol VCBO VCEO VEBO IC IC PD PD TJ TSTG .279(7.09) .275(6.99) 1 2 3 3 Typ .052(1.32) .048(1.22) 3 Typ o o .620(15.75) .600(15.25) .032(0.81) .028(0.71) .189(4.80) .171(4.34) .022 (0.55) Typ 3 Typ o C 3 Typ Dimensions in inches and (millimeters) o C

ELECTRICAL CHARACTERISTICS

o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEB...