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MJD32C Datasheet PDF

Dc Components MJD32C

PNP EPITAXIAL PLANAR TRANSISTOR

Part No. MJD32C
Datasheet MJD32C Download
Manufacturer
Dc Components
Description PNP EPITAXIAL PLANAR TRANSISTOR
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MJD32C datasheet page 1 preview

DESCRIPTION

Designed for use in general purpose amplifier and switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

ABSOLUTE MAXIMUM RATINGS

(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -100 -100 -5 -3 15 +150 -55 to +150 Unit V V V A W oC oC TO-252(DPAK) .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .063(1.60) .055(1.40) .077(1.95) .065(1.65) .022(0.55) .018(0.45) 1 .035 (0.90) Max .032 Max (0.80) .228(5.80) .213(5.40) 23 .110(2.80) .087(2.20) .091 (2.30) Typ .059(1.50) .035(0.90) .024(0.60) .018(0.45) Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS

(Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol M