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MJE13003D Datasheet PDF

Dc Components MJE13003D

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Part No. MJE13003D
Datasheet MJE13003D Download
Manufacturer
Dc Components
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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MJE13003D datasheet page 1 preview

DESCRIPTION

Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning 1 = Base 2 = Collector 3 = Emitter .148(3.75) .138(3.50) .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) .146(3.70) .136(3.44)

ABSOLUTE MAXIMUM RATINGS

(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .123(3.12) .113(2.87) Symbol VCEV VCEO VEBO IC IB PD TJ TSTG Rating 700 400 9 1.5 0.75 40 +150 -55 to +150 Unit V V V A A W o o .300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .090 Typ (2.28) Dimensions in inches and (millimeters) .084(2.14) .074(1.88) .591(15.0) .551(14.0) .027(0.69) .017(0.43) C C

ELECTRICAL CHARACTERISTICS

o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEV BVCEO ICEV IEBO VCE(sat)1 VCE(sat)2...