DM3400DI
Description
20V N-Channel Enhancement Mode MOSFET
The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 20V ID =3.2A
RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ）
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
SOT23L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID ID IDM PD RθJA TJ, TSTG
Continuous Drain Current TA = 25℃ Continuous Drain Current TA = 100℃
Pulsed Drain Current
Power Dissipation TA = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range
Marking A09T
Max. 20 ±12 3.2 2 12 0.77 162
-55 to +150
.dcy-china.
Qty(PCS) 3000
Units V V A A A W
℃/W ℃
20V...
