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F DN338 (DMDN338P) SOT-23 (SOT-23 Field Effect Transistors)
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P-Channel Enhancement-Mode MOS FETs
P MOS
■MAXIMUM RATINGS
Characteristic
Symbol
Drain-Source Voltage -
Gate- Source Voltage -
Drain Current (continuous) -
Drain Current (pulsed) -
Total Device Dissipation
TA=25℃ 25℃
BVDSS VGS ID IDM PD
Junction
TJ
Storage Temperature
Tstg
■DEVICE MARKING
F DN338 (DMDN338P) =338P
Max
-20 +8 -1.6 -5
500
150 -55to+150
Unit
V V A A
mW
℃ ℃
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F DN338 (DMDN338P)
■ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted ， 25℃)
Characteristic
Symbol Min Typ Max
Drain-Source Breakdown Voltage
-(ID = -250uA,VGS=0V) BVDSS
-20
—
—
Gate Threshold Voltage (ID = -250uA,VGS= VDS)
VGS(th) -0.4
—
-1.
DMDN338P Datasheet
