DT4955A - -30V P+P-Channel Enhancement Mode MOSFET

General Description

The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = -30V ID =-7.5A RDS(ON) < 25mΩ @ VGS=10V.

📥 Download Datasheet

DT4955A -30v p+p-channel enhancement mode mosfet by DCY - Datasheet Preview

Datasheet Details

Part number	DT4955A
Manufacturer	DCY
File Size	2.31 MB
Description	-30V P+P-Channel Enhancement Mode MOSFET
Datasheet	DT4955A Datasheet

Other Datasheets by DCY

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description DT4955A -30V P+P-Channel Enhancement Mode MOSFET The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-7.