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DT4955A - -30V P+P-Channel Enhancement Mode MOSFET

Description

The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -30V ID =-7.5A RDS(ON) < 25mΩ @ VGS=10V.

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Datasheet preview – DT4955A

Datasheet Details

Part number DT4955A
Manufacturer DCY
File Size 2.31 MB
Description -30V P+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet DT4955A Datasheet
Additional preview pages of the DT4955A datasheet.

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    Description DT4955A -30V P+P-Channel Enhancement Mode MOSFET The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-7.
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