DT4955A
Description
-30V P+P-Channel Enhancement Mode MOSFET
The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -30V ID =-7.5A RDS(ON) < 25mΩ @ VGS=10V
Application
Lithium battery protection Wireless impact Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
SOP-8
4955A XXX YYYY
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
Parameter
Rating
Drain-Source Voltage
-30
VGS ID@TA=25℃ ID@TA=70℃
IDM EAS
Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1
Pulsed Drain Current2 Single Pulse Avalanche Energy3
±20 -7.2 -5.2 -26 72.2
IAS PD@TA=25℃
TSTG
Avalanche Current Total Power Dissipation4 Storage Temperature Range
-38 1.5 -55 to 150
Operating Junction...
