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DG12N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG12N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG12N60
Manufacturer DGME
File Size 822.48 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG12N60 Datasheet
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DG12N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG12N60N，， ，，，。 ，，。 DG12N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 12 0.
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