DG18N50 Datasheet PDF - DGME N-CHANNEL ENHANCEMENT MODE MOSFET Specs

DG18N50 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG18N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Datasheet Details

Part number	DG18N50
Manufacturer	DGME
File Size	934.39 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG18N50 Datasheet
Additional preview pages of the DG18N50 datasheet.

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Full PDF Text Transcription

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DG18N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG18N50N，，，，，。，，。 DG18N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 18 0.

Published: Apr 12, 2017 |