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DG20N50 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG15N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG20N50
Manufacturer DGME
File Size 843.23 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG20N50 Datasheet
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DG20N50 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG20N50N，， ，，，。 ，，。 DG15N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 20 0.
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