DG55N06 Datasheet | DGME

Description DG55N06是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面 工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品 能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。 DG55N06 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. 符号 Symbol 主要参数 MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 60 55 18 115 V A mΩ p F 封装 Package １ /10 绝对最大额定值...