DG55N06 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

proprietary.

switching performance and enhance the avalanche energy.

DG55N06 N-CHANNEL ENHANCEMENT MODE MOSFET by DGME - Datasheet Preview — Datasheet preview – DG55N06

Datasheet Details

Part number	DG55N06
Manufacturer	DGME
File Size	1.19 MB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG55N06 Datasheet
Additional preview pages of the DG55N06 datasheet.

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Full PDF Text Transcription

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DG55N06 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG55N06N，，，，，。，，。 DG55N06 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Published: Apr 12, 2017 |