DG55N06 Overview
DG55N06是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面 工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品 能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。 DG55N06 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in...