DG7N60 Datasheet | DGME

Description DG7N60是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面 工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产 品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。 DG7N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. 主要参数 MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 7 1.3 16 V A Ω p F 符号 Symbol 封装 Package 1 /9 绝对最大额定值 ABSOLUTE MAXIMUM RATINGS (Tc=25℃) 参数名称 Parameter 漏极-源极直流电压 Drain-Source Voltage 连续漏极电流 Continues Drain Current 最大脉冲漏极电流 (注 1) Plused Drain Current (note1) 最高栅源电压 Gate-to-Source Voltage 单脉冲雪崩能量 (注2) Single Pulsed Avalanche Energy (note2) 雪崩电流 (注 1) Avalanche Current (note1) 重复雪崩能量 (注 1) Repetitive Avalanche Energy (note1) 二极管反向恢复最大电压变化速率 (注3) Peak Diode Recovery (note3) 耗散功率 Power Dissipation 符号 Symbol VDSS Tc=25℃ ID Tc=100℃ EAR dv/dt Tc=P2D5℃ TO-220/TO-262 TO-220F 耗散功率减额因子 Power Dissipation Derating Factor Abo Pv De(D2F5) ℃ TO-220/TO-262 TO-220F 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Temperature for Soldering TJ，TSTG TL 数值 Value 600 7- 4.0- 25 ±30 4.5 147 48 1.18 0.38 150，-55～+150 单位 Unit V A A V m J A m J V/ns W/℃ ℃...