Datasheet4U Logo Datasheet4U.com

DG8N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG8N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

📥 Download Datasheet

Datasheet preview – DG8N60

Datasheet Details

Part number DG8N60
Manufacturer DGME
File Size 907.51 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG8N60 Datasheet
Additional preview pages of the DG8N60 datasheet.

📁 Similar Datasheet

  • DG8040C - Fixed Inductors (TOKO)
  • DG808BC45 - Gate Turn-off Thyristor (Dynex)
  • DG858BW45 - Gate Turn-off Thyristor (Dynex)
  • DG858DW45 - Gate Turn-Off Thyristor (Dynex)
  • DG884 - 8 x 4 Wideband Video Crosspoint Array (Vishay Siliconix)
Other Datasheets by DGME
  • DG8N65 - N-CHANNEL ENHANCEMENT MODE MOSFET
  • DG8N70 - N-CHANNEL ENHANCEMENT MODE MOSFET
  • DG830 - N-CHANNEL ENHANCEMENT MODE MOSFET
  • DG840 - N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription

Click to expand full text
DG8N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG8N60N，， ，，，。 ，，。 DG8N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 8 1.
Published: |