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DG8N70 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG8N70 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG8N70
Manufacturer DGME
File Size 908.06 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG8N70 Datasheet
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DG8N70 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG8N70N，， ，，，。 ，，。 DG8N70 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 700 8 1.
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