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DG9N90 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG9N90 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG9N90
Manufacturer DGME
File Size 898.68 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG9N90 Datasheet
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    DG9N90 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG9N90N，， ，，，。 ，，。 DG9N90 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 900 9.0 1.
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