MUR480E Datasheet | DIGITRON SEMICONDUCTORS

DIGITRON SEMICONDUCTORS MUR470E-MUR4100E 4A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current (square wave) Mounting method 3, per note 2 Non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60Hz) Operating and storage junction temperature range Maximum thermal resistance Junction to ambient Symbol VRRM VRWM VR IF(AV) IFSM TJ, Tstg RӨJA 470E 700 480E 490E 800 900 4.0 @ TA = 35°C 70 -65 to +175 Note 1 4100E 1000 Unit V A °C °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol 470E 480E 490E Maximum instantaneous forward voltage (1) (IF = 3.0A, TJ = 150°C) (IF = 3.0A, TJ = 25°C) (IF = 4.0A, TJ = 25°C) 1.53 1.75 1.85 Maximum instantaneous reverse current (1) (Rated dc voltage, TJ = 100°C) (Rated dc voltage, TJ = 25°C) 900 25 Maximum reverse recovery time (IF = 1.0A, di/dt = 50A/µs) (IF = 0.5A, IR = 1.0A, IREC = 0.25A) trr 100 75 Maximum forward recovery time (IF = 1.0A, di/dt = 100A/µs, recovery to 1.0V) tfr Controlled avalanche energy Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%. Note 2: PC board with 1 ½” x 1 ½” copper...