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2N7002K Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID Max TA = +25°C 380mA.

General Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

 Motor controls  Power-management functions  Backlighting SOT23 (Standard) G 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected up to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
  • An automotive-compliant part is available under separate datasheet (2N7002KQ) Mechanical.

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