BSS123
Description
and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.
Key Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- High Drain-Source Voltage Rating
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/
- An automotive-pliant part is available under separate datasheet (BSS123Q) Mechanical Data
- Package: SOT23
