BSS123 Overview
and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for lowvoltage, low-current applications such as:.
BSS123 Key Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- High Drain-Source Voltage Rating
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- An automotive-pliant part is available under separate datasheet (BSS123Q)
- Package: SOT23
- Package Material: Molded Plastic. UL Flammability Classification
