BSS123 Datasheet N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Manufacturer: Diodes Incorporated

BSS123 n-channel enhancement mode field effect transistor by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	BSS123
Manufacturer	Diodes Incorporated
File Size	289.37 KB
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Download	BSS123 Download (PDF)

General Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.

These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.

These products are particularly suited for lowvoltage, low-current applications such as: • Small servo motor controls • Power MOSFET gate drivers • Switching applications

Overview

BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 0.

Key Features

Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
High Drain-Source Voltage Rating.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
An automotive-compliant part is ava.

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