BSS123 Datasheet (N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR)

Part: BSS123
Manufacturer: Diodes Incorporated (official site)
Size: 289.37 KB

BSS123 Key Features

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-pliant part is available under separate datasheet (BSS123Q)
Package: SOT23
Package Material: Molded Plastic. UL Flammability Classification

Other BSS123 Datasheets

Manufacturer	Part Number	Description
JCET	BSS123	N-Channel MOSFET
NXP Semiconductors	BSS123	N-channel transistor Logic level FET
Fairchild	BSS123	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Unisonic Technologies	BSS123	N-CHANNEL POWER MOSFET
PanJit Semiconductor	BSS123	100V N-Channel Enhancement Mode MOSFE

View all BSS123 datasheets →

BSS123 Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for lowvoltage, low-current applications such as:.