BSS123 - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Overview

DIODES

Datasheet Details

Part number	BSS123
Manufacturer	DIODES
File Size	289.37 KB
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet	BSS123 Datasheet
Additional preview pages of the BSS123 datasheet.

Product details

Description

and Applications These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology.These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.These products are particularly suited for lowvoltage, low-current applications such as: Small servo motor controls Power MOSFET gate drivers Switching applications

Features

Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
High Drain-Source Voltage Rating.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
An automotive-compliant part is ava.

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Published: Nov 25, 2025 |