DMC2710UV Datasheet | Diodes Incorporated

PLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(ON) 0.4Ω @ VGS = 4.5V 0.5Ω @ VGS = 2.5V 0.7Ω @ VGS = -4.5V 0.9Ω @ VGS = -2.5V ID @TA = +25°C 1.1A 1.0A -0.8A -0.7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits - Low On-Resistance - Low Gate Threshold Voltage N-Channel: VGS(TH) < 1V P-Channel: VGS(TH) < -1V - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - plementary Pair MOSFET - Ultra-Small Surface Mount Package - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Applications - Battery Operated Systems and Solid-State Relays - Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, and so on - Power Supply Converter Circuits SOT563 Mechanical Data - Case: SOT563 - Case Material: Molded Plastic, “Green” Molding...