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DMHT10H032LFJ
100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
BVDSS 100V
RDS(ON) MAX
33mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V
ID MAX TA = +25°C
6A 5A
Description
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
Features
Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed 100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.
DMHT10H032LFJ Datasheet
