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DMN2024UVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max
24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V
ID TA = +25°C
7A 5A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Applications
Backlighting DC-DC Converters Power Management Functions
Features and Benefits
Low On-Resistance Low-Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.