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ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 30V
RDS(ON) MAX 30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID MAX TA = +25°C
5.3A
4.6A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Load Switch DC-DC Converters Power Management Functions
DMN3069L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.