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DMN6070SY
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON)
85mΩ @ VGS = 10V 110mΩ @ VGS = 4.5V
ID TA = +25°C
4.1A 3.6A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
• DC-DC converters • Power-management functions • Backlighting
Features and Benefits
• Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change
control (i.e.