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DMN60H080DS
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
BVDSS 600V
RDS(ON) 100Ω @ VGS = 10V
Package SOT23
ID TA = +25°C
80mA
Description
This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.
Features
Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
DMN60H080DS Datasheet
