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DMN60H3D5SK3 - N-CHANNEL MOSFET

General Description

This new generation complementary MOSFET

Key Features

  • low onresistance and fast switching, making it ideal for high efficiency power management.

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A D V A N C E DNIEN FWOPRRMOADT IU COTN Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 600V RDS(ON) Max 3.5 @ VGS = 10V ID TC = +25°C 2.8A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features  Low Input Capacitance  High BVDSS Rating for Power Application  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TO252 (DPAK) (Type TH)  Case Material: Molded Plastic, “Green” Molding Compound.