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DMN60H4D5SK3 - N-CHANNEL MOSFET

General Description

This new generation MOSFET

Key Features

  • low on-resistance and fast switching, making it ideal for high efficiency power management.

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DMN60H4D5SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 600V RDS(ON) 4.5Ω@VGS = 10V ID TC = +25°C 2.5A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features  Low Input Capacitance  High BVDSS Rating for Power Application  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TO252 (DPAK) (Type TH)  Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0  Terminals: Matte Tin Finish Annealed over Copper Leadframe.