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DMN62D1LFDQ - N-Channel MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Backlighting Power Management Functions DC-DC Converters Mechanical Data Case: U-DFN1212-3 (Type

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 60V RDS(ON) 2Ω @ VGS = 4V 2.5Ω @ VGS = 2.5V ID TA = +25°C 400mA 350mA DMN62D1LFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: U-DFN1212-3 (Type C)  Case Material: Molded Plastic.