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DMN68M7SCT - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low Input Capacitance.
  • Low Input/Output Leakage.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription

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DMN68M7SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 68V RDS(ON) 8.0mΩ @ VGS = 10V ID TC = +25°C 100A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  100% Unclamped Inductive Switch (UIS) Test in Production  Low Input Capacitance  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
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