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DMN95H2D2HCTI - N-CHANNEL MOSFET

Description

This new generation complementary dual MOSFET

Features

  • low onresistance and fast switching, making it ideal for high efficiency power management.

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMN95H2D2HCTI Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 2.2Ω@VGS = 10V ID TC = +25°C 6A Description This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Features  Low Input Capacitance  High BVDSS Rating for Power Application  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
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