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DMNH6009SPS - 60V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power-management functions DC-DC converters Backlighting Site 1: PowerDI5060-8 P

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low RDS(ON).
  • Minimizes Power Losses.
  • Low Qg.
  • Minimizes Switching Losses.
  • < 1.1mm Package Profile.
  • Ideal for Thin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMNH6009SPS Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) Max 7.3mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V ID Max TC = +25°C 95A 67A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  Power-management functions  DC-DC converters  Backlighting Site 1: PowerDI5060-8 Pin 1 Top View Bottom View Features  Rated to +175°C—Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) Test in Production  Low RDS(ON)—Minimizes Power Losses  Low Qg—Minimizes Switching Losses  < 1.