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ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS -20V
RDS(ON) Max
36m @ VGS = -4.5V 60m @ VGS = -2.5V
ID TA = +25°C
-5.3A -3.9A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Backlighting Power Management Functions DC-DC Converters
POWERDI3333-8 (Type UXB)
Pin 1
S1 G1S2G2
DMP2040UND
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.