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Product Summary
BVDSS -20V
RDS(on)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA = +25°C
-0.5A -0.48A -0.4A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
• DC-DC Converters • Load Switch • Power Management Functions
SOT523
DMP2900UT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.