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DMT10H052LFDF - 100V N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Datasheet Details

Part number DMT10H052LFDF
Manufacturer DIODES
File Size 477.23 KB
Description 100V N-CHANNEL MOSFET
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DMT10H052LFDF 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 52mΩ @ VGS = 10V 75mΩ @ VGS = 4.5V ID max TA = +25°C 5A 4.1A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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