DMT10H4M5LPS
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Key Features
- BVDSS 100V RDS(ON) Max 4.3mΩ @ VGS = 10V ID Max TC = +25°C (Note
- Halogen and Antimony Free. “Green” Device (Note 3)
