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DMT12H007LPS - 120V N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Switching DC-DC Converters PowerDI5060-8 100% Unclamped Inductive Switching (UIS)

Features

  • BVDSS 120V RDS(ON) Max 7.8mΩ @ VGS = 10V 14.1mΩ @ VGS = 4.5V ID TC = +25°C 90A 70A.

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Datasheet Details

Part number DMT12H007LPS
Manufacturer DIODES
File Size 510.42 KB
Description 120V N-CHANNEL MOSFET
Datasheet download datasheet DMT12H007LPS Datasheet
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DMT12H007LPS Green 120V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS 120V RDS(ON) Max 7.8mΩ @ VGS = 10V 14.1mΩ @ VGS = 4.5V ID TC = +25°C 90A 70A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Switching  DC-DC Converters PowerDI5060-8  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  <1.
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