Datasheet4U Logo Datasheet4U.com

DMT12H090LFDF4 - 115V N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

DC-DC Primary Switch Load Switch Mechanical Data Case: X2-DFN2020-

Features

  • 0.4mm Profile.
  • Ideal for Low Profile.

📥 Download Datasheet

Datasheet preview – DMT12H090LFDF4

Datasheet Details

Part number DMT12H090LFDF4
Manufacturer DIODES
File Size 501.49 KB
Description 115V N-CHANNEL MOSFET
Datasheet download datasheet DMT12H090LFDF4 Datasheet
Additional preview pages of the DMT12H090LFDF4 datasheet.
Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
Product Summary BVDSS 115V BVDSS @TJmax 120V RDS(ON) Max 90mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID Max TA = +25°C 3.4A 2.3A DMT12H090LFDF4 115V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.4mm Profile—Ideal for Low Profile Applications  PCB Footprint of 4mm2  100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
Published: |