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DMT26M0LDG - ASYMMETRIC DUAL N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications.

Power-management functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

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DMT26M0LDG Green ASYMMETRIC DUAL N-CHANNEL MOSFET Product Summary Device Q1 Q2 BVDSS 25V 25V RDS(ON) Max 6mΩ @ VGS = 10V 7.5mΩ @ VGS = 4.5V 2.0mΩ @ VGS = 10V 3.1mΩ @ VGS = 4.5V ID Max TA = +25C 11.6A 10.4A 20.1A 16.1A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Applications • Power-management functions Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.