DMT31M4LFVW
DMT31M4LFVW is 30V N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Features and Benefits
BVDSS 30V
RDS(ON) Max 1.6mΩ @ VGS = 10V 2.6mΩ @ VGS = 4.5V
ID Max TC = +25°C
120A
97A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- Backlighting
- Power-management functions
- DC-DC converters
- Low RDS(ON)
- Ensures On-State Losses Are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
- Wettable Flank for Improved Optical Inspection
- Lead-Free Finish; Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Mechanical Data
- Package: Power DI®3333-8
- Package Material: Molded Plastic, "Green" Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.03 grams (Approximate)
Power DI3333-8/SWP (Type UX)
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