• Part: DMT31M4LFVW
  • Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET
  • Category: MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 301.48 KB
Download DMT31M4LFVW Datasheet PDF
Diodes Incorporated
DMT31M4LFVW
DMT31M4LFVW is 30V N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Features and Benefits BVDSS 30V RDS(ON) Max 1.6mΩ @ VGS = 10V 2.6mΩ @ VGS = 4.5V ID Max TC = +25°C 120A 97A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. - Backlighting - Power-management functions - DC-DC converters - Low RDS(ON) - Ensures On-State Losses Are Minimized - Small Form Factor Thermally Efficient Package Enables Higher Density End Products - Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product - Wettable Flank for Improved Optical Inspection - Lead-Free Finish; Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Mechanical Data - Package: Power DI®3333-8 - Package Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.03 grams (Approximate) Power DI3333-8/SWP (Type UX) Top...