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ADVANCED INFORMATION
Product Summary
BVDSS 30V
RDS(ON) Max 9mΩ @ VGS = 10V 13.5mΩ @ VGS = 4.5V
ID Max TA = +25°C
12A
10A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions
X2-DFN2020-6 (Type W)
DMT35M4LFDF4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.4mm Profile—Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e.