DMT6011LSS - 60V N-CHANNEL MOSFET

Diodes Incorporated

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

High Frequency Switching Synchronous Rectification DC-DC Converters SO-8 S Featu

Key Features

100% Unclamped Inductive Switching (UIS) Test in Production.
Ensures More Reliable and Robust End.

📥 Download Datasheet

DMT6011LSS 60v n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMT6011LSS
Manufacturer	Diodes Incorporated
File Size	496.42 KB
Description	60V N-CHANNEL MOSFET
Datasheet	DMT6011LSS Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DMT6010SCT	N-Channel MOSFET	INCHANGE
DMT6004SCT	N-Channel MOSFET	INCHANGE
DMT6005LCT	N-Channel MOSFET	INCHANGE
DMT6009LCT	N-Channel MOSFET	INCHANGE
DMT028QVNTNT0S-1A	LCD Module	Densitron

Other Datasheets by Diodes Incorporated

Part Number	Description
DMT6011LPDW	60V DUAL N-CHANNEL MOSFET
DMT6010LFG	N-Channel MOSFET
DMT6010LPS	N-Channel MOSFET
DMT6010LSS	N-Channel MOSFET
DMT6010SCT	N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DMT6011LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary BVDSS 60V RDS(ON) Max 11mΩ @ VGS = 10V 14.5mΩ @ VGS = 4.5V ID Max TA = +25°C 10.6A 9.5A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.