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DMT6016LPSW
60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
BVDSS 60V
RDS(ON) MAX
16.5mΩ @ VGS = 10V 26mΩ @ VGS = 4.5V
ID MAX TC = +25°C
43A
34A
Features
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.