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DMT616MLSS - 60V N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

High-Frequency Switching Synchronous Rectification DC-DC Converters

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMT616MLSS
Manufacturer Diodes Incorporated
File Size 468.53 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet DMT616MLSS Datasheet
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DMT616MLSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 14mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID Max TA = +25°C 10A 8.1A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.  High-Frequency Switching  Synchronous Rectification  DC-DC Converters Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON)—Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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